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Spintronic devices: a promising alternative to CMOS devices.
Optimization of Pt-based spin-Hall-effect spintronic devices.
Spin Hall Effect Transistor | Science.
Spintronic logic design methodology based on spin Hall effect-driven.
A Comparative Study between Spin-Transfer-Torque and Spin-Hall-Effect.
Recent advances in the spin Hall effect of light - PubMed.
Advancing hardware security using polymorphic and stochastic spin-hall.
Spintronics for Next Generation Innovative Devices - Google Books.
Berkeley Lab Researchers Use Metamaterials to Observe Giant Photonic.
Giant spin Hall effect in perpendicularly spin-polarized FePt.
Rev. Mod. Phys. 87, 1213 (2015) - Spin Hall effects.
Room-Temperature Spin Hall Effect in Graphene/MoS2 van der Waals.
Spin Hall effect devices | Request PDF - ResearchGate.
US9230626B2 - Electrically gated three-terminal circuits and devices.

Spintronic devices: a promising alternative to CMOS devices.

In the conventional spin Hall effect (SHE) 3,4 or the Rashba-Edelstein effect (REE) 1,2, the induced spin polarization p, either in a heavy metal (HM) or at a nonmagnetic metal (NM)/FM interface. The spin Hall effect is a relativistic spin-orbit coupling phenomenon that can be used to electrically generate or detect spin currents in non-magnetic systems. Here we review the experimental results that, since the first experimental observation of the spin Hall effect less than 10 years ago, have established the basic physical understanding of the phenomenon, and the role that several of.

Optimization of Pt-based spin-Hall-effect spintronic devices.

Photonic spin Hall effect (SHE) refers to the splitting of opposite spin photons perpendicular to the incident plane of light beam, which is the result of the spin-orbit interaction In Section 4, we focus on the spin-Hall devices, a class of optical metasurfaces with multifunctionality and infinitesimal thickness.

Spin Hall Effect Transistor | Science.

A new publication from Opto-Electronic Science; DOI 10.29026/oes.2022.220007 overviews the photonic spin hall effect. When a beam is reflected (or refracted) at optical interface or propagating. Protecting intellectual property (IP) in electronic circuits has become a serious challenge in recent years. Logic locking/encryption and layout camouflaging are two prominent techniques for IP protection. Most existing approaches, however, particularly those focused on CMOS integration, incur excessive design overheads resulting from their need for additional circuit structures or device. "This paper is the first to demonstrate the inverse spin Hall effect in a range of organic semiconductors with unprecedented sensitivity," although a 2013 study by other researchers demonstrated.

Spintronic logic design methodology based on spin Hall effect-driven.

We report a giant spin Hall effect in β-W thin films. Using spin torque induced ferromagnetic resonance with a β-W/CoFeB bilayer microstrip, we determine the spin Hall angle to be |θSHβ-W|=0.30±0.02, large enough for an in-plane current to efficiently reverse the orientation of an in-plane magnetized CoFeB free layer of a nanoscale magnetic tunnel junction adjacent to a thin β-W layer. We report on the spin Hall effect in epitaxial Pt films with well-defined crystalline (200), (220), and (111) orientations and smooth surfaces. The magnitude of the spin Hall effect has been determined by spin-torque ferromagnetic resonance measurements on epitaxial Pt/Py heterostructures. We observed a 54% enhancement of the charge-to-spin conversion efficiency of the epitaxial Pt when.

A Comparative Study between Spin-Transfer-Torque and Spin-Hall-Effect.

Spin Hall and quantum spin Hall effects have been demonstrated in certain atomically thin two-dimensional (2D) materials. In this work, we develop a multiscale simulation method from atomistic quantum transport simulation to the circuit model for the spin Hall effect (SHE) device based on 2D materials. Such a SOT is not suitable for controlling perpendicular magnetization, which would be more beneficial for realizing low-power-consumption memory devices. Recently we focus on magnetic spin Hall effect (MSHE) in the topological Weyl antiferromagnet Mn3Sn, in which the spin-polarization direction of current-induced spin accumulation changes its. Aug 23, 2020 · A leading contender for next-generation memories is a spintronic device that stores data in a small magnet controlled with an electric current or field via the spin Hall effect (SHE). SHE is a mechanism by which materials convert an input electric current into an output spin current.

Recent advances in the spin Hall effect of light - PubMed.

Electrically induced electron-spin polarization near the edges of a semiconductor channel was detected and imaged with the use of Kerr rotation microscopy. The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect. Measurements of unstrained gallium arsenide and strained. The emergence of topological order in graphene is in great demand for the realization of quantum spin Hall states. Recently, it is theoretically proposed that the spin textures of surface states in topological insulator can be directly transferred to graphene by means of proximity effect. Here we report the observations of the topological proximity effect in the graphene-topological insulator. Hence, the stack SUB∣ beta-W∣Ta∣CoFeB∣MgO∣Ta was deposited and patterned into a Hall bar device. The competition between external magnetic field and internal effective fields is demonstrated. An empirical model is developed to estimate the spin Hall angle (SHA). The SHA is estimated = 0.24 +/- 0.05 for the entire stack.

Advancing hardware security using polymorphic and stochastic spin-hall.

The spin Hall effect (SHE) is a transport phenomenon predicted by Russian physicists Mikhail I. Dyakonov and Vladimir I. Perel in 1971. It consists of the appearance of spin accumulation on the lateral surfaces of an electric current -carrying sample, the signs of the spin directions being opposite on the opposing boundaries. In this paper, we propose an energy efficient in-memory computing platform based on novel 4-terminal spin Hall effect-driven domain wall motion devices that could be employed as both non-volatile memory cell and in-memory logic unit. The proposed designs lead to unity of memory and logic. May 18, 2020 · The conversion of charge current into spin current, via spin Hall effect (SHE), attracts extensive interest due to its rich physics and significant technological impact. As an attractive method to control magnetism using electric currents, SHE could empower energy-efficient data storage technologies.

Spintronics for Next Generation Innovative Devices - Google Books.

Additionally, for a single graphene/MoS 2 heterostructure-based device, we evidence a superimposed spin-to-charge current conversion that can be indistinguishably associated with either the proximity-induced Rashba-Edelstein effect in graphene or the spin Hall effect in MoS 2. By a comparison of our results to theoretical calculations, the. We study experimentally the routes to improve the characteristics of the spin-Hall-effect devices based on permalloy/Pt bilayers by optimization of the Pt layer thickness and by the addition of an.

Berkeley Lab Researchers Use Metamaterials to Observe Giant Photonic.

Furthermore, the device exhibits a nearly complete gate-controlled spin-valve effect. DOI: 10.1103/PhysRevLett.93.216805 PACS numbers: 73.23.Hk, 72.25.-b, 85.35.Gv, 85.75.-d Electronic devices, which exploit the spin as well as charge of the electron, have attracted much interest over the last several years.

Giant spin Hall effect in perpendicularly spin-polarized FePt.

June 25, 2021. The discovery of the spin Hall effect (SHE) enabled the efficient generation and manipulation of the spin current [1]. The magnetic spin Hall effect provides a unique opportunity to control the spin current and relevant device performance with controllable magnetization [2]. In this talk, we report the magnetic spin Hall effect. Spin Hall effect in four terminal devices KWANT script below describes four-terminal graphene device, with gold adatoms in the central square, which generates spin Hall current in the transverse leads as a response to injected longitudinal charge current. The script output is the spin Hall angle defined as.

Rev. Mod. Phys. 87, 1213 (2015) - Spin Hall effects.

LETTERS Giant spin Hall effect in perpendicularly spin-polarized FePt/Au devices TAKESHI SEKI1*, YU HASEGAWA1, SEIJI MITANI1, SABURO TAKAHASHI1,2, HIROSHI IMAMURA2,3, SADAMICHI MAEKAWA1,2, JUNSAKU NITTA4 AND KOKI TAKANASHI1 1Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan 2CREST, Japan Science and Technology Agency, Tokyo 102-0075, Japan.

Room-Temperature Spin Hall Effect in Graphene/MoS2 van der Waals.

In this paper, we propose a model implementation of a compact spin-based voltage comparator using a hybrid spin-CMOS approach. The circuit is based on the spin hall effect (SHE) property of tungsten (β-W). 1 1. C. F. Pai et al., " Spin transfer torque devices utilizing the giant spin Hall effect of tungsten," Appl. Phys. Lett. 101, 122404. Universal Intrinsic Spin Hall Effect Jairo Sinova,1,2 Dimitrie Culcer,2 Q. Niu,2 N. A. Sinitsyn,1 T. Jungwirth,2,3 and A. H. MacDonald2 1Department of Physics,... The science of devices whose operation is based in part on manipulation of the electronic spin degree of freedom, spintronics, has emerged [1] as an active subﬁeld of con-.

Spin Hall effect devices | Request PDF - ResearchGate.

We proposed valley-coupled spintronic devices based on monolayer WSe2 that utilize Valley-Spin Hall (VSH) effect to switch nano-magnets. The unique features of the proposed device are (a) the ability to switch magnets with perpendicular magnetic anisotropy (PMA) and (b) an integrated gate that can modulate the charge/spin current flow. This chapter reviews the basic aspects of the spin Hall effect (SHE) and inverse spin Hall effect. It introduces a basic framework and discusses the mechanism of the SHE in semiconductors and in metals. This is then followed by a discussion on the topological insulators. In SHE and ISHE time-reversal symmetry is imposed.

US9230626B2 - Electrically gated three-terminal circuits and devices.

Spin Hall Effect is an important subfield of spintronics. It studies spin current, spin transport, and spin accumulation in paramagnetic systems. It can further understanding of quantum physics, device physics, and may also provide insights for spin injection, spin detection and spin manipulation in the design of the next generation spintronics.